Data Sheet
ADT7310
Rev. A | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
VDD to GND
0.3 V to +7 V
DIN Input Voltage to GND
0.3 V to VDD + 0.3 V
DOUT Voltage to GND
0.3 V to V
DD
+ 0.3 V
SCLK Input Voltage to GND
0.3 V to V
DD
+ 0.3 V
CS Input Voltage to GND
0.3 V to V
DD
+ 0.3 V
CT and INT Output Voltage to GND
0.3 V to VDD + 0.3 V
ESD Rating (Human Body Model)
2.0 kV
Operating Temperature Range
55癈 to +150癈
Storage Temperature Range
65癈 to +160癈
Maximum Junction Temperature, T
JMAX
150癈
8-Lead SOIC-N (R-8)
Power Dissipation
1
WMAX = (TJMAX TA
2
)/?SPAN class="pst ADT7310TRZ_2301899_5">JA
Thermal Impedance
3
?SPAN class="pst ADT7310TRZ_2301899_5">JA, Junction-to-Ambient (Still Air)
121癈/W
?/DIV>
JC
, Junction-to-Case
56癈/W
IR Reflow Soldering
220癈
Peak Temperature (RoHS-
Compliant Package)
260癈 (0癈)
Time at Peak Temperature
20 sec to 40 sec
Ramp-Up Rate
3癈/sec maximum
Ramp-Down Rate
6癈/sec maximum
Time from 25癈 to Peak Temperature
8 minutes maximum
1
Values relate to package being used on a standard 2-layer PCB. This gives a
worst-case ?SPAN class="pst ADT7310TRZ_2301899_6">JA and ?SPAN class="pst ADT7310TRZ_2301899_6">JC. See Figure 4 for a plot of maximum power dissipation
vs. ambient temperature (T
A
).
2
TA = ambient temperature.
3
Junction-to-case resistance is applicable to components featuring a
preferential flow direction, for example, components mounted on a heat
sink. Junction-to-ambient is more useful for air-cooled, PCB-mounted
components.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TEMPERATURE 癈
1.2
0.8
1.0
0.6
0.2
0.4
0 0
MAX PD = 3.4mW AT 150癈
Figure 4. SOIC_N Maximum Power Dissipation vs. Temperature
ESD CAUTION
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